Ferroelectric Memories

Author: James F. Scott
Publisher: Springer Science & Business Media
ISBN: 3662043076
Format: PDF, Docs
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This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Springer Handbook of Condensed Matter and Materials Data

Author: Werner Martienssen
Publisher: Springer Science & Business Media
ISBN: 3540304371
Format: PDF, Mobi
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Springer Handbook of Condensed Matter and Materials Data provides a concise compilation of data and functional relationships from the fields of solid-state physics and materials in this 1200 page volume. The data, encapsulated in 914 tables and 1025 illustrations, have been selected and extracted primarily from the extensive high-quality data collection Landolt-Börnstein and also from other systematic data sources and recent publications of physical and technical property data. Many chapters are authored by Landolt-Börnstein editors, including the prominent Springer Handbook editors, W. Martienssen and H. Warlimont themselves. The Handbook is designed to be useful as a desktop reference for fast and easy retrieval of essential and reliable data in the lab or office. References to more extensive data sources are also provided in the book and by interlinking to the relevant sources on the enclosed CD-ROM. Physicists, chemists and engineers engaged in fields of solid-state sciences and materials technologies in research, development and application will appreciate the ready access to the key information coherently organized within this wide-ranging Handbook. From the reviews: "...this is the most complete compilation I have ever seen... When I received the book, I immediately searched for data I never found elsewhere..., and I found them rapidly... No doubt that this book will soon be in every library and on the desk of most solid state scientists and engineers. It will never be at rest." -Physicalia Magazine

Ferroelectric Gate Field Effect Transistor Memories

Author: Byung-Eun Park
Publisher: Springer
ISBN: 940240841X
Format: PDF, Docs
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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Springer Handbook of Materials Data

Author: Hans Warlimont
Publisher: Springer
ISBN: 3319697439
Format: PDF, Docs
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The second edition of this well-received handbook is the most concise yet comprehensive compilation of materials data. The chapters provide succinct descriptions and summarize essential and reliable data for various types of materials. The information is amply illustrated with 900 tables and 1050 figures selected primarily from well-established data collections, such as Landolt-Börnstein, which is now part of the SpringerMaterials database. The new edition of the Springer Handbook of Materials Data starts by presenting the latest CODATA recommended values of the fundamental physical constants and provides comprehensive tables of the physical and physicochemical properties of the elements. 25 chapters collect and summarize the most frequently used data and relationships for numerous metals, nonmetallic materials, functional materials and selected special structures such as liquid crystals and nanostructured materials. Along with careful updates to the content and the inclusion of timely and extensive references, this second edition includes new chapters on polymers, materials for solid catalysts and low-dimensional semiconductors. This handbook is an authoritative reference resource for engineers, scientists and students engaged in the vast field of materials science.

VLSI Memory Chip Design

Author: Kiyoo Itoh
Publisher: Springer Science & Business Media
ISBN: 3662044781
Format: PDF, ePub
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A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

Large Area and Flexible Electronics

Author: Mario Caironi
Publisher: John Wiley & Sons
ISBN: 3527679995
Format: PDF, Mobi
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From materials to applications, this ready reference covers the entire value chain from fundamentals via processing right up to devices, presenting different approaches to large-area electronics, thus enabling readers to compare materials, properties and performance. Divided into two parts, the first focuses on the materials used for the electronic functionality, covering organic and inorganic semiconductors, including vacuum and solution-processed metal-oxide semiconductors, nanomembranes and nanocrystals, as well as conductors and insulators. The second part reviews the devices and applications of large-area electronics, including flexible and ultra-high-resolution displays, light-emitting transistors, organic and inorganic photovoltaics, large-area imagers and sensors, non-volatile memories and radio-frequency identification tags. With its academic and industrial viewpoints, this volume provides in-depth knowledge for experienced researchers while also serving as a first-stop resource for those entering the field.

Physics of Semiconductor Devices

Author: Massimo Rudan
Publisher: Springer
ISBN: 3319631543
Format: PDF
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This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.

Materials for Information Technology

Author: Ehrenfried Zschech
Publisher: Springer Science & Business Media
ISBN: 1846282357
Format: PDF, ePub
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This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.