Laser Annealing of Semiconductors

Author: J Poate
Publisher: Elsevier
ISBN: 0323145426
Format: PDF, ePub, Mobi
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Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.

Melting Phenomenon and Laser Annealing in Semiconductors

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ISBN:
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The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results.

Semiconductors Probed by Ultrafast Laser Spectroscopy

Author: R. R. Alfano
Publisher: Elsevier
ISBN: 0323145469
Format: PDF, ePub, Docs
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Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of time-resolved spectroscopy. Scientists, engineers, and graduate students will find this book invaluable.

Laser Applications in Surface Science and Technology

Author: Horst-Günter Rubahn
Publisher: John Wiley & Sons
ISBN: 9780471984504
Format: PDF, ePub
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Lasers are becoming increasingly important in surface science, both for the diagnostic evaluation and the processing of surfaces, for example, higher harmonic generation for diagnosis and the widespread use of laser surface microstructuring and annealing for processing. The physics behind such applications might be described in some cases by simple heating and melting processes, but can also include much more complex phenomena such as plasma generation or elementary collective surface excitations. Laser Applications in Surface Science and Technology provides an overview of the different techniques, discusses the principles behind them and gives a concise description of laser-induced and laser-detected processes on surfaces. Recent developments in the field such as nonlinear surface spectroscopies and the interactions of ultrashort pulses with materials, are also introduced. Invaluable reading for postgraduate students and research scientists across a wide range of disciplines including: physics, chemistry, electronic engineering and materials science.

Topics in Growth and Device Processing of III V Semiconductors

Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Format: PDF, Mobi
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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Physical Processes in Laser Materials Interactions

Author: M. Bertolotti
Publisher: Springer Science & Business Media
ISBN: 1468443224
Format: PDF, Mobi
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It is a pleasure to write a few words as an introduction to the proceedings of the 1980 NATO ASI on "Physical Processes in Laser Naterial Interaction." This ASI is the ninth course of a series devoted to lasers and their applications, held under the responsibility of the Quantum Electronics Division of the European Physical Society, and for this reason known as the "Europhysics School of Quantum Electronics." Since 1971 the School has been operating with the joint direc tion of myself as representative of the academic research, and Dr. D. Roess (formerly with Siemens AEG, Munich, and now with Sick, Optik und Electronik, GmbH, Munich) for the industrial applications. Indeed the aim of the School is to alternate fundamental and applied frontier topics in the area of quantum electronics and modern optics, in order to introduce young research people from universities and industrial R&D laboratories to the new aspects of research opened by the laser.

Subsecond Annealing of Advanced Materials

Author: Wolfgang Skorupa
Publisher: Springer Science & Business Media
ISBN: 3319031317
Format: PDF, Kindle
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The thermal processing of materials ranges from few fem to seconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

Semiconductors Probed by Ultrafast Laser Spectroscopy

Author: R. R. Alfano
Publisher: Elsevier
ISBN: 0323145469
Format: PDF, Kindle
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Semiconductors Probed by Ultrafast Laser Spectroscopy, Volume II discusses the use of ultrafast laser spectroscopy in studying fast physics in semiconductors. It reviews progress on the experimental and theoretical understanding of ultrafast events that occur on a picosecond and nanosecond time scale. This volume discusses electronic relaxation in amorphous semiconductors and the physical mechanisms during and after the interaction of an intense laser pulse with a semiconductor. It also covers the relaxation of carriers in semiconductors; transient optical pulse propagation; and methods of time-resolved spectroscopy. Scientists, engineers, and graduate students will find this book invaluable.

Proceedings of the 17th International Conference on the Physics of Semiconductors

Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Format: PDF
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The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Advances in Semiconductor Nanostructures

Author: Alexander V. Latyshev
Publisher: Elsevier
ISBN: 0128105135
Format: PDF, Kindle
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries