Transistor Level Modeling for Analog RF IC Design

Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 1402045565
Format: PDF, Docs
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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Charge Based MOS Transistor Modeling

Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Format: PDF, Docs
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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

The gm ID Methodology a sizing tool for low voltage analog CMOS Circuits

Author: Paul Jespers
Publisher: Springer Science & Business Media
ISBN: 9780387471013
Format: PDF, Mobi
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IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

Structured Analog CMOS Design

Author: Danica Stefanovic
Publisher: Springer Science & Business Media
ISBN: 1402085737
Format: PDF, ePub, Docs
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Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The basic design concept consists in analog cell partitioning into the basic analog structures and sizing of these basic analog structures in a predefined procedural design sequence. The procedural design sequence ensures the correct propagation of design specifications, the verification of parameter limits and the local optimization loops. The proposed design procedure is also implemented as a CAD tool that follows this book.

RF Circuit Design

Author: Christopher Bowick
Publisher: Elsevier
ISBN: 0080516289
Format: PDF, ePub, Mobi
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Essential reading for experts in the field of RF circuit design and engineers needing a good reference. This book provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters. It also covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail. Provides complete design procedures for multiple-pole Butterworth, Chebyshev, and Bessel filters Covers capacitors, inductors, and other components with their behavior at RF frequencies discussed in detail

Modeling and Simulation for RF System Design

Author: Ronny Frevert
Publisher: Springer Science & Business Media
ISBN: 0387275851
Format: PDF, ePub, Mobi
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Modern telecommunication systems are highly complex from an algorithmic point of view. The complexity continues to increase due to advanced modulation schemes, multiple protocols and standards, as well as additional functionality such as personal organizers or navigation aids. To have short and reliable design cycles, efficient verification methods and tools are necessary. Modeling and simulation need to accompany the design steps from the specification to the overall system verification in order to bridge the gaps between system specification, system simulation, and circuit level simulation. Very high carrier frequencies together with long observation periods result in extremely large computation times and requires, therefore, specialized modeling methods and simulation tools on all design levels. The focus of Modeling and Simulation for RF System Design lies on RF specific modeling and simulation methods and the consideration of system and circuit level descriptions. It contains application-oriented training material for RF designers which combines the presentation of a mixed-signal design flow, an introduction into the powerful standardized hardware description languages VHDL-AMS and Verilog-A, and the application of commercially available simulators. Modeling and Simulation for RF System Design is addressed to graduate students and industrial professionals who are engaged in communication system design and want to gain insight into the system structure by own simulation experiences. The authors are experts in design, modeling and simulation of communication systems engaged at the Nokia Research Center (Bochum, Germany) and the Fraunhofer Institute for Integrated Circuits, Branch Lab Design Automation (Dresden, Germany).

MOSFET Technologies for Double Pole Four Throw Radio Frequency Switch

Author: Viranjay M. Srivastava
Publisher: Springer Science & Business Media
ISBN: 3319011650
Format: PDF, ePub, Docs
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This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Process Variations and Probabilistic Integrated Circuit Design

Author: Manfred Dietrich
Publisher: Springer Science & Business Media
ISBN: 9781441966216
Format: PDF, ePub, Docs
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Uncertainty in key parameters within a chip and between different chips in the deep sub micron area plays a more and more important role. As a result, manufacturing process spreads need to be considered during the design process. Quantitative methodology is needed to ensure faultless functionality, despite existing process variations within given bounds, during product development. This book presents the technological, physical, and mathematical fundamentals for a design paradigm shift, from a deterministic process to a probability-orientated design process for microelectronic circuits. Readers will learn to evaluate the different sources of variations in the design flow in order to establish different design variants, while applying appropriate methods and tools to evaluate and optimize their design.

Compact Modeling

Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9789048186143
Format: PDF, ePub
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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Nano scale CMOS Analog Circuits

Author: Soumya Pandit
Publisher: CRC Press
ISBN: 1466564288
Format: PDF
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Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.